n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Cer.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

JANSR2N7470T1

JANSR2N7471T1

JANSR2N7476T1

JANSR2N7477T1

JANSR2N7478T1

JANSR2N7400

JANSR2N7401

JANSR2N7402

JANSR2N7403

JANSR2N7404

JANSR2N7405

JANSR2N7406

JANSR2N7407

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts